Gate-controlled electromechanical backaction induced by a quantum dot

Yuma Okazaki (), Imran Mahboob, Koji Onomitsu, Satoshi Sasaki and Hiroshi Yamaguchi ()
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Yuma Okazaki: NTT Basic Research Laboratories, NTT Corporation
Imran Mahboob: NTT Basic Research Laboratories, NTT Corporation
Koji Onomitsu: NTT Basic Research Laboratories, NTT Corporation
Satoshi Sasaki: NTT Basic Research Laboratories, NTT Corporation
Hiroshi Yamaguchi: NTT Basic Research Laboratories, NTT Corporation

Nature Communications, 2016, vol. 7, issue 1, 1-6

Abstract: Abstract Semiconductor-based quantum structures integrated into mechanical resonators have emerged as a unique platform for generating entanglement between macroscopic phononic and mesocopic electronic degrees of freedom. A key challenge to realizing this is the ability to create and control the coupling between two vastly dissimilar systems. Here, such coupling is demonstrated in a hybrid device composed of a gate-defined quantum dot integrated into a piezoelectricity-based mechanical resonator enabling milli-Kelvin phonon states to be detected via charge fluctuations in the quantum dot. Conversely, the single electron transport in the quantum dot can induce a backaction onto the mechanics where appropriate bias of the quantum dot can enable damping and even current-driven amplification of the mechanical motion. Such electron transport induced control of the mechanical resonator dynamics paves the way towards a new class of hybrid semiconductor devices including a current injected phonon laser and an on-demand single phonon emitter.

Date: 2016
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DOI: 10.1038/ncomms11132

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