Suppressing molecular vibrations in organic semiconductors by inducing strain

Takayoshi Kubo, Roger Häusermann, Junto Tsurumi, Junshi Soeda, Yugo Okada, Yu Yamashita, Norihisa Akamatsu, Atsushi Shishido (), Chikahiko Mitsui, Toshihiro Okamoto, Susumu Yanagisawa, Hiroyuki Matsui () and Jun Takeya ()
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Takayoshi Kubo: Graduate School of Frontier Sciences, The University of Tokyo
Roger Häusermann: Graduate School of Frontier Sciences, The University of Tokyo
Junto Tsurumi: Graduate School of Frontier Sciences, The University of Tokyo
Junshi Soeda: Graduate School of Frontier Sciences, The University of Tokyo
Yugo Okada: Graduate School of Frontier Sciences, The University of Tokyo
Yu Yamashita: Graduate School of Frontier Sciences, The University of Tokyo
Norihisa Akamatsu: Chemical Resources Laboratory, Tokyo Institute of Technology
Atsushi Shishido: Chemical Resources Laboratory, Tokyo Institute of Technology
Chikahiko Mitsui: Graduate School of Frontier Sciences, The University of Tokyo
Toshihiro Okamoto: Graduate School of Frontier Sciences, The University of Tokyo
Susumu Yanagisawa: Faculty of Science, University of the Ryukyus
Hiroyuki Matsui: Graduate School of Frontier Sciences, The University of Tokyo
Jun Takeya: Graduate School of Frontier Sciences, The University of Tokyo

Nature Communications, 2016, vol. 7, issue 1, 1-7

Abstract: Abstract Organic molecular semiconductors are solution processable, enabling the growth of large-area single-crystal semiconductors. Improving the performance of organic semiconductor devices by increasing the charge mobility is an ongoing quest, which calls for novel molecular and material design, and improved processing conditions. Here we show a method to increase the charge mobility in organic single-crystal field-effect transistors, by taking advantage of the inherent softness of organic semiconductors. We compress the crystal lattice uniaxially by bending the flexible devices, leading to an improved charge transport. The mobility increases from 9.7 to 16.5 cm2 V−1 s−1 by 70% under 3% strain. In-depth analysis indicates that compressing the crystal structure directly restricts the vibration of the molecules, thus suppresses dynamic disorder, a unique mechanism in organic semiconductors. Since strain can be easily induced during the fabrication process, we expect our method to be exploited to build high-performance organic devices.

Date: 2016
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DOI: 10.1038/ncomms11156

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