Growth of semiconducting single-wall carbon nanotubes with a narrow band-gap distribution

Feng Zhang, Peng-Xiang Hou, Chang Liu (), Bing-Wei Wang, Hua Jiang, Mao-Lin Chen, Dong-Ming Sun, Jin-Cheng Li, Hong-Tao Cong, Esko I. Kauppinen and Hui-Ming Cheng ()
Additional contact information
Feng Zhang: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
Peng-Xiang Hou: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
Chang Liu: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
Bing-Wei Wang: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
Hua Jiang: Nano Materials Group, School of Science, Aalto University
Mao-Lin Chen: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
Dong-Ming Sun: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
Jin-Cheng Li: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
Hong-Tao Cong: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
Esko I. Kauppinen: Nano Materials Group, School of Science, Aalto University
Hui-Ming Cheng: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences

Nature Communications, 2016, vol. 7, issue 1, 1-9

Abstract: Abstract The growth of high-quality semiconducting single-wall carbon nanotubes with a narrow band-gap distribution is crucial for the fabrication of high-performance electronic devices. However, the single-wall carbon nanotubes grown from traditional metal catalysts usually have diversified structures and properties. Here we design and prepare an acorn-like, partially carbon-coated cobalt nanoparticle catalyst with a uniform size and structure by the thermal reduction of a [Co(CN)6]3− precursor adsorbed on a self-assembled block copolymer nanodomain. The inner cobalt nanoparticle functions as active catalytic phase for carbon nanotube growth, whereas the outer carbon layer prevents the aggregation of cobalt nanoparticles and ensures a perpendicular growth mode. The grown single-wall carbon nanotubes have a very narrow diameter distribution centred at 1.7 nm and a high semiconducting content of >95%. These semiconducting single-wall carbon nanotubes have a very small band-gap difference of ∼0.08 eV and show excellent thin-film transistor performance.

Date: 2016
References: Add references at CitEc
Citations: View citations in EconPapers (1)

Downloads: (external link)
https://www.nature.com/articles/ncomms11160 Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms11160

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/ncomms11160

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().