Giant spin-torque diode sensitivity in the absence of bias magnetic field

Bin Fang, Mario Carpentieri, Xiaojie Hao, Hongwen Jiang, Jordan A. Katine, Ilya N. Krivorotov, Berthold Ocker, Juergen Langer, Kang L. Wang, Baoshun Zhang, Bruno Azzerboni, Pedram Khalili Amiri (), Giovanni Finocchio () and Zhongming Zeng ()
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Bin Fang: Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences
Mario Carpentieri: Polytechnic of Bari
Xiaojie Hao: University of California
Hongwen Jiang: University of California
Jordan A. Katine: HGST Inc
Ilya N. Krivorotov: University of California
Berthold Ocker: Singulus Technologies
Juergen Langer: Singulus Technologies
Kang L. Wang: University of California
Baoshun Zhang: Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences
Bruno Azzerboni: University of Messina
Pedram Khalili Amiri: University of California
Giovanni Finocchio: Physical Sciences and Earth Sciences, University of Messina
Zhongming Zeng: Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences

Nature Communications, 2016, vol. 7, issue 1, 1-7

Abstract: Abstract Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. However, so far, practical implementations of spin-diode microwave detectors have been limited by the necessity to apply a magnetic field. Here, we demonstrate nanoscale magnetic tunnel junction microwave detectors, exhibiting high-detection sensitivity of 75,400 mV mW−1 at room temperature without any external bias fields, and for low-input power (micro-Watts or lower). This sensitivity is significantly larger than both state-of-the-art Schottky diode detectors and existing spintronic diodes. Micromagnetic simulations and measurements reveal the essential role of injection locking to achieve this sensitivity performance. This mechanism may provide a pathway to enable further performance improvement of spin-torque diode microwave detectors.

Date: 2016
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DOI: 10.1038/ncomms11259

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