Hallmarks of the Mott-metal crossover in the hole-doped pseudospin-1/2 Mott insulator Sr2IrO4

Yue Cao (), Qiang Wang, Justin A. Waugh, Theodore J. Reber, Haoxiang Li, Xiaoqing Zhou, Stephen Parham, S.-R. Park, Nicholas C. Plumb, Eli Rotenberg, Aaron Bostwick, Jonathan D. Denlinger, Tongfei Qi, Michael A. Hermele, Gang Cao and Daniel S. Dessau ()
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Yue Cao: University of Colorado
Qiang Wang: University of Colorado
Justin A. Waugh: University of Colorado
Theodore J. Reber: University of Colorado
Haoxiang Li: University of Colorado
Xiaoqing Zhou: University of Colorado
Stephen Parham: University of Colorado
S.-R. Park: University of Colorado
Nicholas C. Plumb: Swiss Light Source, Paul Scherrer Institut
Eli Rotenberg: Advanced Light Source, Lawrence Berkeley National Laboratory
Aaron Bostwick: Advanced Light Source, Lawrence Berkeley National Laboratory
Jonathan D. Denlinger: Advanced Light Source, Lawrence Berkeley National Laboratory
Tongfei Qi: Center for Advanced Materials, University of Kentucky
Michael A. Hermele: University of Colorado
Gang Cao: Center for Advanced Materials, University of Kentucky
Daniel S. Dessau: University of Colorado

Nature Communications, 2016, vol. 7, issue 1, 1-7

Abstract: Abstract The physics of doped Mott insulators remains controversial after decades of active research, hindered by the interplay among competing orders and fluctuations. It is thus highly desired to distinguish the intrinsic characters of the Mott-metal crossover from those of other origins. Here we investigate the evolution of electronic structure and dynamics of the hole-doped pseudospin-1/2 Mott insulator Sr2IrO4. The effective hole doping is achieved by replacing Ir with Rh atoms, with the chemical potential immediately jumping to or near the top of the lower Hubbard band. The doped iridates exhibit multiple iconic low-energy features previously observed in doped cuprates—pseudogaps, Fermi arcs and marginal-Fermi-liquid-like electronic scattering rates. We suggest these signatures are most likely an integral part of the material’s proximity to the Mott state, rather than from many of the most claimed mechanisms, including preformed electron pairing, quantum criticality or density-wave formation.

Date: 2016
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DOI: 10.1038/ncomms11367

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