Fast electronic resistance switching involving hidden charge density wave states

I. Vaskivskyi, I. A. Mihailovic, S. Brazovskii, J. Gospodaric, T. Mertelj, D. Svetin, P. Sutar and D. Mihailovic ()
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I. Vaskivskyi: Complex matter F7, Jozef Stefan Institute
I. A. Mihailovic: Complex matter F7, Jozef Stefan Institute
S. Brazovskii: LPTMS-CNRS
J. Gospodaric: Complex matter F7, Jozef Stefan Institute
T. Mertelj: Complex matter F7, Jozef Stefan Institute
D. Svetin: Complex matter F7, Jozef Stefan Institute
P. Sutar: Complex matter F7, Jozef Stefan Institute
D. Mihailovic: Complex matter F7, Jozef Stefan Institute

Nature Communications, 2016, vol. 7, issue 1, 1-6

Abstract: Abstract The functionality of computer memory elements is currently based on multi-stability, driven either by locally manipulating the density of electrons in transistors or by switching magnetic or ferroelectric order. Another possibility is switching between metallic and insulating phases by the motion of ions, but their speed is limited by slow nucleation and inhomogeneous percolative growth. Here we demonstrate fast resistance switching in a charge density wave system caused by pulsed current injection. As a charge pulse travels through the material, it converts a commensurately ordered polaronic Mott insulating state in 1T–TaS2 to a metastable electronic state with textured domain walls, accompanied with a conversion of polarons to band states, and concurrent rapid switching from an insulator to a metal. The large resistance change, high switching speed (30 ps) and ultralow energy per bit opens the way to new concepts in non-volatile memory devices manipulating all-electronic states.

Date: 2016
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DOI: 10.1038/ncomms11442

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