Determination of the spin-lifetime anisotropy in graphene using oblique spin precession

Bart Raes (), Jeroen E. Scheerder, Marius V. Costache, Frédéric Bonell, Juan F. Sierra, Jo Cuppens, Joris Van de Vondel and Sergio O. Valenzuela ()
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Bart Raes: Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB
Jeroen E. Scheerder: INPAC—Institute for Nanoscale Physics and Chemistry, KU Leuven
Marius V. Costache: Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB
Frédéric Bonell: Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB
Juan F. Sierra: Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB
Jo Cuppens: Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB
Joris Van de Vondel: INPAC—Institute for Nanoscale Physics and Chemistry, KU Leuven
Sergio O. Valenzuela: Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB

Nature Communications, 2016, vol. 7, issue 1, 1-7

Abstract: Abstract We determine the spin-lifetime anisotropy of spin-polarized carriers in graphene. In contrast to prior approaches, our method does not require large out-of-plane magnetic fields and thus it is reliable for both low- and high-carrier densities. We first determine the in-plane spin lifetime by conventional spin precession measurements with magnetic fields perpendicular to the graphene plane. Then, to evaluate the out-of-plane spin lifetime, we implement spin precession measurements under oblique magnetic fields that generate an out-of-plane spin population. We find that the spin-lifetime anisotropy of graphene on silicon oxide is independent of carrier density and temperature down to 150 K, and much weaker than previously reported. Indeed, within the experimental uncertainty, the spin relaxation is isotropic. Altogether with the gate dependence of the spin lifetime, this indicates that the spin relaxation is driven by magnetic impurities or random spin-orbit or gauge fields.

Date: 2016
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DOI: 10.1038/ncomms11444

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