Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties

S. K. Kushwaha (), I. Pletikosić, T. Liang, A. Gyenis, S. H. Lapidus, Yao Tian, He Zhao, K. S. Burch, Jingjing Lin, Wudi Wang, Huiwen Ji, A. V. Fedorov, Ali Yazdani, N. P. Ong, T. Valla and R. J. Cava ()
Additional contact information
S. K. Kushwaha: Frick Chemistry Laboratory, Princeton University
I. Pletikosić: Princeton University
T. Liang: Princeton University
A. Gyenis: Princeton University
S. H. Lapidus: Advanced Photon Source, Argonne National Laboratory
Yao Tian: University of Toronto
He Zhao: Boston College
K. S. Burch: Boston College
Jingjing Lin: Princeton University
Wudi Wang: Princeton University
Huiwen Ji: Frick Chemistry Laboratory, Princeton University
A. V. Fedorov: Advanced Light Source, Lawrence Berkeley National Laboratory
Ali Yazdani: Princeton University
N. P. Ong: Princeton University
T. Valla: Brookhaven National Laboratory
R. J. Cava: Frick Chemistry Laboratory, Princeton University

Nature Communications, 2016, vol. 7, issue 1, 1-9

Abstract: Abstract A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons and be growable as large, high-quality bulk single crystals. Here we show that this material obstacle is overcome by bulk crystals of lightly Sn-doped Bi1.1Sb0.9Te2S grown by the vertical Bridgman method. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunnelling microscopy, transport studies, X-ray diffraction and Raman scattering. We present this material as a high-quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.

Date: 2016
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DOI: 10.1038/ncomms11456

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