Photo-induced halide redistribution in organic–inorganic perovskite films

Dane W. deQuilettes, Wei Zhang, Victor M. Burlakov, Daniel J. Graham, Tomas Leijtens, Anna Osherov, Vladimir Bulović, Henry J. Snaith, David S. Ginger and Samuel D. Stranks ()
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Dane W. deQuilettes: University of Washington
Wei Zhang: University of Oxford
Victor M. Burlakov: University of Oxford
Daniel J. Graham: University of Washington
Tomas Leijtens: University of Oxford
Anna Osherov: Research Laboratory of Electronics, Massachusetts Institute of Technology
Vladimir Bulović: Research Laboratory of Electronics, Massachusetts Institute of Technology
Henry J. Snaith: University of Oxford
David S. Ginger: University of Washington
Samuel D. Stranks: Research Laboratory of Electronics, Massachusetts Institute of Technology

Nature Communications, 2016, vol. 7, issue 1, 1-9

Abstract: Abstract Organic–inorganic perovskites such as CH3NH3PbI3 are promising materials for a variety of optoelectronic applications, with certified power conversion efficiencies in solar cells already exceeding 21%. Nevertheless, state-of-the-art films still contain performance-limiting non-radiative recombination sites and exhibit a range of complex dynamic phenomena under illumination that remain poorly understood. Here we use a unique combination of confocal photoluminescence (PL) microscopy and chemical imaging to correlate the local changes in photophysics with composition in CH3NH3PbI3 films under illumination. We demonstrate that the photo-induced ‘brightening’ of the perovskite PL can be attributed to an order-of-magnitude reduction in trap state density. By imaging the same regions with time-of-flight secondary-ion-mass spectrometry, we correlate this photobrightening with a net migration of iodine. Our work provides visual evidence for photo-induced halide migration in triiodide perovskites and reveals the complex interplay between charge carrier populations, electronic traps and mobile halides that collectively impact optoelectronic performance.

Date: 2016
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DOI: 10.1038/ncomms11683

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