Correction: Corrigendum: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

Ashish V. Penumatcha, Ramon B. Salazar and Joerg Appenzeller

Nature Communications, 2016, vol. 7, issue 1, 1-1

Abstract: Nature Communications 6: Article number: 8948 (2015); Published: 13 November 2015; Updated: 6 June 2016. This Article contains an error in the penultimate sentence of the penultimate paragraph. This sentence should read: ‘In other words, if one would analyse the minimum current level Imin using a simple parabolic κ(E) WKB approximation, one would extract a much smaller bandgap since Imin is severely underestimated.

Date: 2016
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DOI: 10.1038/ncomms11913

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