Discovery of earth-abundant nitride semiconductors by computational screening and high-pressure synthesis

Yoyo Hinuma, Taisuke Hatakeyama, Yu Kumagai, Lee A. Burton, Hikaru Sato, Yoshinori Muraba, Soshi Iimura, Hidenori Hiramatsu (), Isao Tanaka, Hideo Hosono and Fumiyasu Oba ()
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Yoyo Hinuma: Kyoto University, Yoshida-Honmachi
Taisuke Hatakeyama: Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology
Yu Kumagai: Materials Research Center for Element Strategy, Tokyo Institute of Technology
Lee A. Burton: Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology
Hikaru Sato: Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology
Yoshinori Muraba: Materials Research Center for Element Strategy, Tokyo Institute of Technology
Soshi Iimura: Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology
Hidenori Hiramatsu: Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology
Isao Tanaka: Kyoto University, Yoshida-Honmachi
Hideo Hosono: Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology
Fumiyasu Oba: Kyoto University, Yoshida-Honmachi

Nature Communications, 2016, vol. 7, issue 1, 1-10

Abstract: Abstract Nitride semiconductors are attractive because they can be environmentally benign, comprised of abundant elements and possess favourable electronic properties. However, those currently commercialized are mostly limited to gallium nitride and its alloys, despite the rich composition space of nitrides. Here we report the screening of ternary zinc nitride semiconductors using first-principles calculations of electronic structure, stability and dopability. This approach identifies as-yet-unreported CaZn2N2 that has earth-abundant components, smaller carrier effective masses than gallium nitride and a tunable direct bandgap suited for light emission and harvesting. High-pressure synthesis realizes this phase, verifying the predicted crystal structure and band-edge red photoluminescence. In total, we propose 21 promising systems, including Ca2ZnN2, Ba2ZnN2 and Zn2PN3, which have not been reported as semiconductors previously. Given the variety in bandgaps of the identified compounds, the present study expands the potential suitability of nitride semiconductors for a broader range of electronic, optoelectronic and photovoltaic applications.

Date: 2016
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DOI: 10.1038/ncomms11962

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