Electron–hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator

Yoshitaka Kawasugi (), Kazuhiro Seki, Yusuke Edagawa, Yoshiaki Sato, Jiang Pu, Taishi Takenobu, Seiji Yunoki, Hiroshi M. Yamamoto () and Reizo Kato
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Yoshitaka Kawasugi: Condensed Molecular Materials Laboratory, RIKEN
Kazuhiro Seki: Computational Condensed Matter Physics Laboratory, RIKEN
Yusuke Edagawa: Waseda University
Yoshiaki Sato: Condensed Molecular Materials Laboratory, RIKEN
Jiang Pu: Waseda University
Taishi Takenobu: Waseda University
Seiji Yunoki: Computational Condensed Matter Physics Laboratory, RIKEN
Hiroshi M. Yamamoto: Condensed Molecular Materials Laboratory, RIKEN
Reizo Kato: Condensed Molecular Materials Laboratory, RIKEN

Nature Communications, 2016, vol. 7, issue 1, 1-8

Abstract: Abstract It is widely recognized that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high Tc cuprates. The doping effect, including the electron–hole doping asymmetry, may be more straightforward in doped organic Mott insulators owing to their simple electronic structures. Here we investigate the doping asymmetry of an organic Mott insulator by carrying out electric-double-layer transistor measurements and using cluster perturbation theory. The calculations predict that strongly anisotropic suppression of the spectral weight results in the Fermi arc state under hole doping, while a relatively uniform spectral weight results in the emergence of a non-interacting-like Fermi surface (FS) in the electron-doped state. In accordance with the calculations, the experimentally observed Hall coefficients and resistivity anisotropy correspond to the pocket formed by the Fermi arcs under hole doping and to the non-interacting FS under electron doping.

Date: 2016
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DOI: 10.1038/ncomms12356

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