Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes

Fucai Liu, Lu You, Kyle L. Seyler, Xiaobao Li, Peng Yu, Junhao Lin, Xuewen Wang, Jiadong Zhou, Hong Wang, Haiyong He, Sokrates T. Pantelides, Wu Zhou, Pradeep Sharma, Xiaodong Xu, Pulickel M. Ajayan, Junling Wang () and Zheng Liu ()
Additional contact information
Fucai Liu: Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University
Lu You: School of Materials Science and Engineering, Nanyang Technological University
Kyle L. Seyler: University of Washington
Xiaobao Li: School of Civil Engineering, Hefei University of Technology
Peng Yu: Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University
Junhao Lin: Vanderbilt University
Xuewen Wang: Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University
Jiadong Zhou: Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University
Hong Wang: Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University
Haiyong He: Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University
Sokrates T. Pantelides: Vanderbilt University
Wu Zhou: Oak Ridge National Laboratory
Pradeep Sharma: University of Houston
Xiaodong Xu: University of Washington
Pulickel M. Ajayan: Rice University
Junling Wang: School of Materials Science and Engineering, Nanyang Technological University
Zheng Liu: Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University

Nature Communications, 2016, vol. 7, issue 1, 1-6

Abstract: Abstract Two-dimensional (2D) materials have emerged as promising candidates for various optoelectronic applications based on their diverse electronic properties, ranging from insulating to superconducting. However, cooperative phenomena such as ferroelectricity in the 2D limit have not been well explored. Here, we report room-temperature ferroelectricity in 2D CuInP2S6 (CIPS) with a transition temperature of ∼320 K. Switchable polarization is observed in thin CIPS of ∼4 nm. To demonstrate the potential of this 2D ferroelectric material, we prepare a van der Waals (vdW) ferroelectric diode formed by CIPS/Si heterostructure, which shows good memory behaviour with on/off ratio of ∼100. The addition of ferroelectricity to the 2D family opens up possibilities for numerous novel applications, including sensors, actuators, non-volatile memory devices, and various vdW heterostructures based on 2D ferroelectricity.

Date: 2016
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DOI: 10.1038/ncomms12357

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