Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

Seungho Cho, Chao Yun, Stefan Tappertzhofen, Ahmed Kursumovic, Shinbuhm Lee, Ping Lu, Quanxi Jia, Meng Fan, Jie Jian, Haiyan Wang, Stephan Hofmann and Judith L. MacManus-Driscoll ()
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Seungho Cho: University of Cambridge
Chao Yun: University of Cambridge
Stefan Tappertzhofen: University of Cambridge
Ahmed Kursumovic: University of Cambridge
Shinbuhm Lee: University of Cambridge
Ping Lu: Sandia National Laboratory
Quanxi Jia: Center for Integrated Nanotechnologies, Los Alamos National Laboratory
Meng Fan: Texas A&M University
Jie Jian: Texas A&M University
Haiyan Wang: Texas A&M University
Stephan Hofmann: University of Cambridge
Judith L. MacManus-Driscoll: University of Cambridge

Nature Communications, 2016, vol. 7, issue 1, 1-10

Abstract: Abstract Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performance is also limited by the incomplete understanding of the underlying mechanisms. Here, we report a novel memristive model material system based on self-assembled Sm-doped CeO2 and SrTiO3 films that allow the separate tailoring of nanoscale ionic and electronic channels at high density (∼1012 inch−2). We systematically show that these devices allow precise engineering of the resistance states, thus enabling large on–off ratios and high reproducibility. The tunable structure presents an ideal platform to explore ionic and electronic mechanisms and we expect a wide potential impact also on other nascent technologies, ranging from ionic gating to micro-solid oxide fuel cells and neuromorphics.

Date: 2016
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DOI: 10.1038/ncomms12373

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