Disorder engineering and conductivity dome in ReS2 with electrolyte gating

Dmitry Ovchinnikov, Fernando Gargiulo, Adrien Allain, Diego José Pasquier, Dumitru Dumcenco, Ching-Hwa Ho, Oleg V. Yazyev and Andras Kis ()
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Dmitry Ovchinnikov: Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL)
Fernando Gargiulo: Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL)
Adrien Allain: Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL)
Diego José Pasquier: Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL)
Dumitru Dumcenco: Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL)
Ching-Hwa Ho: Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology
Oleg V. Yazyev: Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL)
Andras Kis: Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL)

Nature Communications, 2016, vol. 7, issue 1, 1-7

Abstract: Abstract Atomically thin rhenium disulphide (ReS2) is a member of the transition metal dichalcogenide family of materials. This two-dimensional semiconductor is characterized by weak interlayer coupling and a distorted 1T structure, which leads to anisotropy in electrical and optical properties. Here we report on the electrical transport study of mono- and multilayer ReS2 with polymer electrolyte gating. We find that the conductivity of monolayer ReS2 is completely suppressed at high carrier densities, an unusual feature unique to monolayers, making ReS2 the first example of such a material. Using dual-gated devices, we can distinguish the gate-induced doping from the electrostatic disorder induced by the polymer electrolyte itself. Theoretical calculations and a transport model indicate that the observed conductivity suppression can be explained by a combination of a narrow conduction band and Anderson localization due to electrolyte-induced disorder.

Date: 2016
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DOI: 10.1038/ncomms12391

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