Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes

Christoph Baeumer, Christoph Schmitz, Astrid Marchewka, David N. Mueller, Richard Valenta, Johanna Hackl, Nicolas Raab, Steven P. Rogers, M. Imtiaz Khan, Slavomir Nemsak, Moonsub Shim, Stephan Menzel, Claus Michael Schneider, Rainer Waser and Regina Dittmann ()
Additional contact information
Christoph Baeumer: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Christoph Schmitz: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Astrid Marchewka: Institute of Materials in Electrical Engineering and Information Technology II, RWTH Aachen University
David N. Mueller: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Richard Valenta: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Johanna Hackl: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Nicolas Raab: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Steven P. Rogers: University of Illinois
M. Imtiaz Khan: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Slavomir Nemsak: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Moonsub Shim: University of Illinois
Stephan Menzel: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Claus Michael Schneider: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Rainer Waser: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Regina Dittmann: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT

Nature Communications, 2016, vol. 7, issue 1, 1-7

Abstract: Abstract The continuing revolutionary success of mobile computing and smart devices calls for the development of novel, cost- and energy-efficient memories. Resistive switching is attractive because of, inter alia, increased switching speed and device density. On electrical stimulus, complex nanoscale redox processes are suspected to induce a resistance change in memristive devices. Quantitative information about these processes, which has been experimentally inaccessible so far, is essential for further advances. Here we use in operando spectromicroscopy to verify that redox reactions drive the resistance change. A remarkable agreement between experimental quantification of the redox state and device simulation reveals that changes in donor concentration by a factor of 2–3 at electrode-oxide interfaces cause a modulation of the effective Schottky barrier and lead to >2 orders of magnitude change in device resistance. These findings allow realistic device simulations, opening a route to less empirical and more predictive design of future memory cells.

Date: 2016
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DOI: 10.1038/ncomms12398

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