Structural and compositional dependence of the CdTexSe1−x alloy layer photoactivity in CdTe-based solar cells

Jonathan D. Poplawsky (), Wei Guo, Naba Paudel, Amy Ng, Karren More, Donovan Leonard and Yanfa Yan
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Jonathan D. Poplawsky: Oak Ridge National Laboratory
Wei Guo: Oak Ridge National Laboratory
Naba Paudel: The University of Toledo
Amy Ng: Vanderbilt University, 7330 Stevenson Center, Nashville, Tennessee 37235, USA
Karren More: Oak Ridge National Laboratory
Donovan Leonard: Oak Ridge National Laboratory
Yanfa Yan: The University of Toledo

Nature Communications, 2016, vol. 7, issue 1, 1-10

Abstract: Abstract The published external quantum efficiency data of the world-record CdTe solar cell suggests that the device uses bandgap engineering, most likely with a CdTexSe1−x alloy layer to increase the short-circuit current and overall device efficiency. Here atom probe tomography, transmission electron microscopy and electron beam-induced current are used to clarify the dependence of Se content on the photoactive properties of CdTexSe1−x alloy layers in bandgap-graded CdTe solar cells. Four solar cells were prepared with 50, 100, 200 and 400 nm-thick CdSe layers to reveal the formation, growth, composition, structure and photoactivity of the CdTexSe1−x alloy with respect to the degree of Se diffusion. The results show that the CdTexSe1−x layer photoactivity is highly dependent on the crystalline structure of the alloy (zincblende versus wurtzite), which is also dependent on the Se and Te concentrations.

Date: 2016
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DOI: 10.1038/ncomms12537

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