Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio

Quoc An Vu, Yong Seon Shin, Young Rae Kim, Nguyen Van Luan, Won Tae Kang, Hyun Kim, Dinh Hoa Luong, Il Min Lee, Kiyoung Lee, Dong-Su Ko, Jinseong Heo, Seongjun Park, Young Hee Lee () and Woo Jong Yu ()
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Quoc An Vu: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)
Yong Seon Shin: Sungkyunkwan University
Young Rae Kim: Sungkyunkwan University
Nguyen Van Luan: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)
Won Tae Kang: Sungkyunkwan University
Hyun Kim: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)
Dinh Hoa Luong: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)
Il Min Lee: Sungkyunkwan University
Kiyoung Lee: Samsung Advanced Institute of Technology
Dong-Su Ko: Samsung Advanced Institute of Technology
Jinseong Heo: Samsung Advanced Institute of Technology
Seongjun Park: Samsung Advanced Institute of Technology
Young Hee Lee: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)
Woo Jong Yu: Sungkyunkwan University

Nature Communications, 2016, vol. 7, issue 1, 1-8

Abstract: Abstract Concepts of non-volatile memory to replace conventional flash memory have suffered from low material reliability and high off-state current, and the use of a thick, rigid blocking oxide layer in flash memory further restricts vertical scale-up. Here, we report a two-terminal floating gate memory, tunnelling random access memory fabricated by a monolayer MoS2/h-BN/monolayer graphene vertical stack. Our device uses a two-terminal electrode for current flow in the MoS2 channel and simultaneously for charging and discharging the graphene floating gate through the h-BN tunnelling barrier. By effective charge tunnelling through crystalline h-BN layer and storing charges in graphene layer, our memory device demonstrates an ultimately low off-state current of 10−14 A, leading to ultrahigh on/off ratio over 109, about ∼103 times higher than other two-terminal memories. Furthermore, the absence of thick, rigid blocking oxides enables high stretchability (>19%) which is useful for soft electronics.

Date: 2016
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DOI: 10.1038/ncomms12725

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