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Dimensional crossover in semiconductor nanostructures

Matthew P. McDonald, Rusha Chatterjee, Jixin Si, Boldizsár Jankó and Masaru Kuno ()
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Matthew P. McDonald: University of Notre Dame
Rusha Chatterjee: University of Notre Dame
Jixin Si: University of Notre Dame
Boldizsár Jankó: University of Notre Dame
Masaru Kuno: University of Notre Dame

Nature Communications, 2016, vol. 7, issue 1, 1-5

Abstract: Abstract Recent advances in semiconductor nanostructure syntheses provide unprecedented control over electronic quantum confinement and have led to extensive investigations of their size- and shape-dependent optical/electrical properties. Notably, spectroscopic measurements show that optical bandgaps of one-dimensional CdSe nanowires are substantially (approximately 100 meV) lower than their zero-dimensional counterparts for equivalent diameters spanning 5–10 nm. But what, exactly, dictates the dimensional crossover of a semiconductor’s electronic structure? Here we probe the one-dimensional to zero-dimensional transition of CdSe using single nanowire/nanorod absorption spectroscopy. We find that carrier electrostatic interactions play a fundamental role in establishing dimensional crossover. Moreover, the critical length at which this transition occurs is governed by the aspect ratio-dependent interplay between carrier confinement and dielectric contrast/confinement energies.

Date: 2016
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms12726

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DOI: 10.1038/ncomms12726

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