Enhancing electric-field control of ferromagnetism through nanoscale engineering of high-Tc MnxGe1−x nanomesh

Tianxiao Nie (), Jianshi Tang, Xufeng Kou, Yin Gen, Shengwei Lee, Xiaodan Zhu, Qinglin He, Li-Te Chang, Koichi Murata, Yabin Fan and Kang L. Wang ()
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Tianxiao Nie: Device Research Laboratory, University of California
Jianshi Tang: Device Research Laboratory, University of California
Xufeng Kou: Device Research Laboratory, University of California
Yin Gen: Device Research Laboratory, University of California
Shengwei Lee: Institute of Materials Science and Engineering, National Central University, 300 Jung-Da Rd, Chung-Li 320
Xiaodan Zhu: Device Research Laboratory, University of California
Qinglin He: Device Research Laboratory, University of California
Li-Te Chang: Device Research Laboratory, University of California
Koichi Murata: Device Research Laboratory, University of California
Yabin Fan: Device Research Laboratory, University of California
Kang L. Wang: Device Research Laboratory, University of California

Nature Communications, 2016, vol. 7, issue 1, 1-9

Abstract: Abstract Voltage control of magnetism in ferromagnetic semiconductor has emerged as an appealing solution to significantly reduce the power dissipation and variability beyond current CMOS technology. However, it has been proven to be very challenging to achieve a candidate with high Curie temperature (Tc), controllable ferromagnetism and easy integration with current Si technology. Here we report the effective electric-field control of both ferromagnetism and magnetoresistance in unique MnxGe1−x nanomeshes fabricated by nanosphere lithography, in which a Tc above 400 K is demonstrated as a result of size/quantum confinement. Furthermore, by adjusting Mn doping concentration, extremely giant magnetoresistance is realized from ∼8,000% at 30 K to 75% at 300 K at 4 T, which arises from a geometrically enhanced magnetoresistance effect of the unique mesh structure. Our results may provide a paradigm for fundamentally understanding the high Tc in ferromagnetic semiconductor nanostructure and realizing electric-field control of magnetoresistance for future spintronic applications.

Date: 2016
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DOI: 10.1038/ncomms12866

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