Even–odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides

Zefei Wu, Shuigang Xu, Huanhuan Lu, Armin Khamoshi, Gui-Bin Liu, Tianyi Han, Yingying Wu, Jiangxiazi Lin, Gen Long, Yuheng He, Yuan Cai, Yugui Yao, Fan Zhang () and Ning Wang ()
Additional contact information
Zefei Wu: the Hong Kong University of Science and Technology
Shuigang Xu: the Hong Kong University of Science and Technology
Huanhuan Lu: the Hong Kong University of Science and Technology
Armin Khamoshi: University of Texas at Dallas
Gui-Bin Liu: Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology
Tianyi Han: the Hong Kong University of Science and Technology
Yingying Wu: the Hong Kong University of Science and Technology
Jiangxiazi Lin: the Hong Kong University of Science and Technology
Gen Long: the Hong Kong University of Science and Technology
Yuheng He: the Hong Kong University of Science and Technology
Yuan Cai: the Hong Kong University of Science and Technology
Yugui Yao: Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology
Fan Zhang: University of Texas at Dallas
Ning Wang: the Hong Kong University of Science and Technology

Nature Communications, 2016, vol. 7, issue 1, 1-8

Abstract: Abstract In few-layer transition metal dichalcogenides (TMDCs), the conduction bands along the ΓK directions shift downward energetically in the presence of interlayer interactions, forming six Q valleys related by threefold rotational symmetry and time reversal symmetry. In even layers, the extra inversion symmetry requires all states to be Kramers degenerate; whereas in odd layers, the intrinsic inversion asymmetry dictates the Q valleys to be spin-valley coupled. Here we report the transport characterization of prominent Shubnikov-de Hass (SdH) oscillations and the observation of the onset of quantum Hall plateaus for the Q-valley electrons in few-layer TMDCs. Universally in the SdH oscillations, we observe a valley Zeeman effect in all odd-layer TMDC devices and a spin Zeeman effect in all even-layer TMDC devices, which provide a crucial information for understanding the unique properties of multi-valley band structures of few-layer TMDCs.

Date: 2016
References: Add references at CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/ncomms12955 Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms12955

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/ncomms12955

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().