Atomically thin quantum light-emitting diodes

Carmen Palacios-Berraquero, Matteo Barbone, Dhiren M. Kara, Xiaolong Chen, Ilya Goykhman, Duhee Yoon, Anna K. Ott, Jan Beitner, Kenji Watanabe, Takashi Taniguchi, Andrea C. Ferrari () and Mete Atatüre ()
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Carmen Palacios-Berraquero: Cavendish Laboratory, University of Cambridge
Matteo Barbone: Cambridge Graphene Centre, University of Cambridge
Dhiren M. Kara: Cavendish Laboratory, University of Cambridge
Xiaolong Chen: Cambridge Graphene Centre, University of Cambridge
Ilya Goykhman: Cambridge Graphene Centre, University of Cambridge
Duhee Yoon: Cambridge Graphene Centre, University of Cambridge
Anna K. Ott: Cambridge Graphene Centre, University of Cambridge
Jan Beitner: Cavendish Laboratory, University of Cambridge
Kenji Watanabe: Advanced Materials Laboratory, National Institute for Materials Science
Takashi Taniguchi: Advanced Materials Laboratory, National Institute for Materials Science
Andrea C. Ferrari: Cambridge Graphene Centre, University of Cambridge
Mete Atatüre: Cavendish Laboratory, University of Cambridge

Nature Communications, 2016, vol. 7, issue 1, 1-6

Abstract: Abstract Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transition metal dichalcogenide mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the transition metal dichalcogenide family as a platform for hybrid, broadband, atomically precise quantum photonics devices.

Date: 2016
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DOI: 10.1038/ncomms12978

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