Time-resolved single dopant charge dynamics in silicon

Mohammad Rashidi (), Jacob A. J. Burgess, Marco Taucer, Roshan Achal, Jason L. Pitters, Sebastian Loth and Robert A. Wolkow
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Mohammad Rashidi: University of Alberta
Jacob A. J. Burgess: Max Planck Institute for the Structure and Dynamics of Matter
Marco Taucer: University of Alberta
Roshan Achal: University of Alberta
Jason L. Pitters: National Institute for Nanotechnology, National Research Council of Canada
Sebastian Loth: Max Planck Institute for the Structure and Dynamics of Matter
Robert A. Wolkow: University of Alberta

Nature Communications, 2016, vol. 7, issue 1, 1-7

Abstract: Abstract As the ultimate miniaturization of semiconductor devices approaches, it is imperative that the effects of single dopants be clarified. Beyond providing insight into functions and limitations of conventional devices, such information enables identification of new device concepts. Investigating single dopants requires sub-nanometre spatial resolution, making scanning tunnelling microscopy an ideal tool. However, dopant dynamics involve processes occurring at nanosecond timescales, posing a significant challenge to experiment. Here we use time-resolved scanning tunnelling microscopy and spectroscopy to probe and study transport through a dangling bond on silicon before the system relaxes or adjusts to accommodate an applied electric field. Atomically resolved, electronic pump-probe scanning tunnelling microscopy permits unprecedented, quantitative measurement of time-resolved single dopant ionization dynamics. Tunnelling through the surface dangling bond makes measurement of a signal that would otherwise be too weak to detect feasible. Distinct ionization and neutralization rates of a single dopant are measured and the physical process controlling those are identified.

Date: 2016
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DOI: 10.1038/ncomms13258

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