Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor

Jangyup Son, Soogil Lee, Sang Jin Kim, Byung Cheol Park, Han-Koo Lee, Sanghoon Kim, Jae Hoon Kim, Byung Hee Hong and Jongill Hong ()
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Jangyup Son: Yonsei University
Soogil Lee: Yonsei University
Sang Jin Kim: Seoul National University
Byung Cheol Park: Yonsei University
Han-Koo Lee: Pohang Accelerator Laboratory
Sanghoon Kim: Yonsei University
Jae Hoon Kim: Yonsei University
Byung Hee Hong: Seoul National University
Jongill Hong: Yonsei University

Nature Communications, 2016, vol. 7, issue 1, 1-7

Abstract: Abstract Graphene is currently at the forefront of cutting-edge science and technology due to exceptional electronic, optical, mechanical, and thermal properties. However, the absence of a sizeable band gap in graphene has been a major obstacle for application. To open and control a band gap in functionalized graphene, several gapping strategies have been developed. In particular, hydrogen plasma treatment has triggered a great scientific interest, because it has been known to be an efficient way to modify the surface of single-layered graphene and to apply for standard wafer-scale fabrication. Here we show a monolayer chemical-vapour-deposited graphene hydrogenated by indirect hydrogen plasma without structural defect and we demonstrate that a band gap can be tuned as wide as 3.9 eV by varying hydrogen coverage. We also show a hydrogenated graphene field-effect transistor, showing that on/off ratio changes over three orders of magnitude at room temperature.

Date: 2016
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DOI: 10.1038/ncomms13261

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