A room-temperature magnetic semiconductor from a ferromagnetic metallic glass

Wenjian Liu, Hongxia Zhang, Jin-an Shi, Zhongchang Wang, Cheng Song, Xiangrong Wang, Siyuan Lu, Xiangjun Zhou, Lin Gu, Dmitri V. Louzguine-Luzgin, Mingwei Chen, Kefu Yao and Na Chen ()
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Wenjian Liu: School of Materials Science and Engineering, Tsinghua University
Hongxia Zhang: School of Materials Science and Engineering, Tsinghua University
Jin-an Shi: Beijing Laboratory for Electron Microscopy, Institute of Physics, CAS
Zhongchang Wang: WPI Advanced Institute for Materials Research (WPI-AIMR), Tohoku University
Cheng Song: School of Materials Science and Engineering, Tsinghua University
Xiangrong Wang: The Hong Kong University of Science and Technology
Siyuan Lu: School of Materials Science and Engineering, Tsinghua University
Xiangjun Zhou: School of Materials Science and Engineering, Tsinghua University
Lin Gu: Beijing Laboratory for Electron Microscopy, Institute of Physics, CAS
Dmitri V. Louzguine-Luzgin: WPI Advanced Institute for Materials Research (WPI-AIMR), Tohoku University
Mingwei Chen: WPI Advanced Institute for Materials Research (WPI-AIMR), Tohoku University
Kefu Yao: School of Materials Science and Engineering, Tsinghua University
Na Chen: School of Materials Science and Engineering, Tsinghua University

Nature Communications, 2016, vol. 7, issue 1, 1-6

Abstract: Abstract Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III–V semiconductors. In contrast to the concept of doping magnetic elements into conventional semiconductors to make diluted magnetic semiconductors, here we propose to oxidize originally ferromagnetic metals/alloys to form new species of magnetic semiconductors. We introduce oxygen into a ferromagnetic metallic glass to form a Co28.6Fe12.4Ta4.3B8.7O46 magnetic semiconductor with a Curie temperature above 600 K. The demonstration of p–n heterojunctions and electric field control of the room-temperature ferromagnetism in this material reflects its p-type semiconducting character, with a mobility of 0.1 cm2 V−1 s−1. Our findings may pave a new way to realize high Curie temperature magnetic semiconductors with unusual multifunctionalities.

Date: 2016
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DOI: 10.1038/ncomms13497

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