Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy

Weiwei Lin (), Nicolas Vernier, Guillaume Agnus, Karin Garcia, Berthold Ocker, Weisheng Zhao, Eric E. Fullerton and Dafiné Ravelosona ()
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Weiwei Lin: Center for Nanoscience and Nanotechnology, Université Paris-Sud–CNRS, UMR 9001
Nicolas Vernier: Center for Nanoscience and Nanotechnology, Université Paris-Sud–CNRS, UMR 9001
Guillaume Agnus: Center for Nanoscience and Nanotechnology, Université Paris-Sud–CNRS, UMR 9001
Karin Garcia: Center for Nanoscience and Nanotechnology, Université Paris-Sud–CNRS, UMR 9001
Berthold Ocker: Singulus Technologies AG
Weisheng Zhao: Center for Nanoscience and Nanotechnology, Université Paris-Sud–CNRS, UMR 9001
Eric E. Fullerton: Center for Memory and Recording Research, University of California San Diego
Dafiné Ravelosona: Center for Nanoscience and Nanotechnology, Université Paris-Sud–CNRS, UMR 9001

Nature Communications, 2016, vol. 7, issue 1, 1-6

Abstract: Abstract Electric field effects in ferromagnetic metal/dielectric structures provide a new route to control domain wall dynamics with low-power dissipation. However, electric field effects on domain wall velocities have only been observed so far in the creep regime where domain wall velocities are low due to strong interactions with pinning sites. Here we show gate voltage modulation of domain wall velocities ranging from the creep to the flow regime in Ta/Co40Fe40B20/MgO/TiO2 structures with perpendicular magnetic anisotropy. We demonstrate a universal description of the role of applied electric fields in the various pinning-dependent regimes by taking into account an effective magnetic field being linear with the electric field. In addition, the electric field effect is found to change sign in the Walker regime. Our results are consistent with voltage-induced modification of magnetic anisotropy. Our work opens new opportunities for the study and optimization of electric field effect at ferromagnetic metal/insulator interfaces.

Date: 2016
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DOI: 10.1038/ncomms13532

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