Laser-induced phase separation of silicon carbide

Insung Choi, Hu Young Jeong, Hyeyoung Shin, Gyeongwon Kang, Myunghwan Byun, Hyungjun Kim, Adrian M. Chitu, James S. Im, Rodney S. Ruoff, Sung-Yool Choi () and Keon Jae Lee ()
Additional contact information
Insung Choi: KAIST
Hu Young Jeong: UNIST Central Research Facilities (UCRF), UNIST
Hyeyoung Shin: Graduate School of Energy, Environment, Water, and Sustainability (EEWS), KAIST
Gyeongwon Kang: Graduate School of Energy, Environment, Water, and Sustainability (EEWS), KAIST
Myunghwan Byun: KAIST
Hyungjun Kim: Graduate School of Energy, Environment, Water, and Sustainability (EEWS), KAIST
Adrian M. Chitu: Program in Materials Science and Engineering, Columbia University
James S. Im: Program in Materials Science and Engineering, Columbia University
Rodney S. Ruoff: Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS)
Sung-Yool Choi: School of Electrical Engineering, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery for 3D Display, KAIST
Keon Jae Lee: KAIST

Nature Communications, 2016, vol. 7, issue 1, 1-7

Abstract: Abstract Understanding the phase separation mechanism of solid-state binary compounds induced by laser–material interaction is a challenge because of the complexity of the compound materials and short processing times. Here we present xenon chloride excimer laser-induced melt-mediated phase separation and surface reconstruction of single-crystal silicon carbide and study this process by high-resolution transmission electron microscopy and a time-resolved reflectance method. A single-pulse laser irradiation triggers melting of the silicon carbide surface, resulting in a phase separation into a disordered carbon layer with partially graphitic domains (∼2.5 nm) and polycrystalline silicon (∼5 nm). Additional pulse irradiations cause sublimation of only the separated silicon element and subsequent transformation of the disordered carbon layer into multilayer graphene. The results demonstrate viability of synthesizing ultra-thin nanomaterials by the decomposition of a binary system.

Date: 2016
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DOI: 10.1038/ncomms13562

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