A CMOS silicon spin qubit

R. Maurand (), X. Jehl, D. Kotekar-Patil, A. Corna, H. Bohuslavskyi, R. Laviéville, L. Hutin, S. Barraud, M. Vinet, M. Sanquer and S. De Franceschi ()
Additional contact information
R. Maurand: University Grenoble Alpes
X. Jehl: University Grenoble Alpes
D. Kotekar-Patil: University Grenoble Alpes
A. Corna: University Grenoble Alpes
H. Bohuslavskyi: University Grenoble Alpes
R. Laviéville: University Grenoble Alpes
L. Hutin: University Grenoble Alpes
S. Barraud: University Grenoble Alpes
M. Vinet: University Grenoble Alpes
M. Sanquer: University Grenoble Alpes
S. De Franceschi: University Grenoble Alpes

Nature Communications, 2016, vol. 7, issue 1, 1-6

Abstract: Abstract Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal–oxide–semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

Date: 2016
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DOI: 10.1038/ncomms13575

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