Reconfigurable exciton-plasmon interconversion for nanophotonic circuits

Hyun Seok Lee (), Dinh Hoa Luong, Min Su Kim, Youngjo Jin, Hyun Kim, Seokjoon Yun and Young Hee Lee ()
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Hyun Seok Lee: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS)
Dinh Hoa Luong: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS)
Min Su Kim: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS)
Youngjo Jin: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS)
Hyun Kim: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS)
Seokjoon Yun: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS)
Young Hee Lee: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS)

Nature Communications, 2016, vol. 7, issue 1, 1-6

Abstract: Abstract The recent challenges for improving the operation speed of nanoelectronics have motivated research on manipulating light in on-chip integrated circuits. Hybrid plasmonic waveguides with low-dimensional semiconductors, including quantum dots and quantum wells, are a promising platform for realizing sub-diffraction limited optical components. Meanwhile, two-dimensional transition metal dichalcogenides (TMDs) have received broad interest in optoelectronics owing to tightly bound excitons at room temperature, strong light-matter and exciton-plasmon interactions, available top-down wafer-scale integration, and band-gap tunability. Here, we demonstrate principal functionalities for on-chip optical communications via reconfigurable exciton-plasmon interconversions in ∼200-nm-diameter Ag-nanowires overlapping onto TMD transistors. By varying device configurations for each operation purpose, three active components for optical communications are realized: field-effect exciton transistors with a channel length of ∼32 μm, field-effect exciton multiplexers transmitting multiple signals through a single NW and electrical detectors of propagating plasmons with a high On/Off ratio of∼190. Our results illustrate the unique merits of two-dimensional semiconductors for constructing reconfigurable device architectures in integrated nanophotonic circuits.

Date: 2016
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DOI: 10.1038/ncomms13663

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