Current crowding mediated large contact noise in graphene field-effect transistors

Paritosh Karnatak (), T. Phanindra Sai (), Srijit Goswami, Subhamoy Ghatak, Sanjeev Kaushal and Arindam Ghosh
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Paritosh Karnatak: Indian Institute of Science
T. Phanindra Sai: Indian Institute of Science
Srijit Goswami: Indian Institute of Science
Subhamoy Ghatak: Indian Institute of Science
Sanjeev Kaushal: Tokyo Electron Ltd, Akasaka Biz Tower
Arindam Ghosh: Indian Institute of Science

Nature Communications, 2016, vol. 7, issue 1, 1-8

Abstract: Abstract The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene–metal interface or the contact noise, on the performance of graphene field-effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field-effect transistors of varying device geometry and contact configuration, with carrier mobility ranging from 5,000 to 80,000 cm2V−1s−1. Our phenomenological model for contact noise because of current crowding in purely two-dimensional conductors confirms that the contacts dominate the measured resistance noise in all graphene field-effect transistors in the two-probe or invasive four-probe configurations, and surprisingly, also in nearly noninvasive four-probe (Hall bar) configuration in the high-mobility devices. The microscopic origin of contact noise is directly linked to the fluctuating electrostatic environment of the metal–channel interface, which could be generic to two-dimensional material-based electronic devices.

Date: 2016
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DOI: 10.1038/ncomms13703

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