Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals

Anh Tuan Duong, Nguyen Van Quang, Ganbat Duvjir, Duong Van Thiet, Suyong Kwon, Jae Yong Song, Jae Ki Lee, Ji Eun Lee, SuDong Park, Taewon Min, Jaekwang Lee, Jungdae Kim and Sunglae Cho ()
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Anh Tuan Duong: University of Ulsan
Nguyen Van Quang: University of Ulsan
Ganbat Duvjir: University of Ulsan
Duong Van Thiet: University of Ulsan
Suyong Kwon: Korea Research Institute of Standards and Science (KRISS)
Jae Yong Song: Korea Research Institute of Standards and Science (KRISS)
Jae Ki Lee: Thermoelectric Conversion Research Center, Korea Electrotechnology Research Institute (KERI)
Ji Eun Lee: Thermoelectric Conversion Research Center, Korea Electrotechnology Research Institute (KERI)
SuDong Park: Thermoelectric Conversion Research Center, Korea Electrotechnology Research Institute (KERI)
Taewon Min: Pusan National University
Jaekwang Lee: Pusan National University
Jungdae Kim: University of Ulsan
Sunglae Cho: University of Ulsan

Nature Communications, 2016, vol. 7, issue 1, 1-6

Abstract: Abstract Recently SnSe, a layered chalcogenide material, has attracted a great deal of attention for its excellent p-type thermoelectric property showing a remarkable ZT value of 2.6 at 923 K. For thermoelectric device applications, it is necessary to have n-type materials with comparable ZT value. Here, we report that n-type SnSe single crystals were successfully synthesized by substituting Bi at Sn sites. In addition, it was found that the carrier concentration increases with Bi content, which has a great influence on the thermoelectric properties of n-type SnSe single crystals. Indeed, we achieved the maximum ZT value of 2.2 along b axis at 733 K in the most highly doped n-type SnSe with a carrier density of −2.1 × 1019 cm−3 at 773 K.

Date: 2016
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DOI: 10.1038/ncomms13713

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