Directional interlayer spin-valley transfer in two-dimensional heterostructures

John R. Schaibley (), Pasqual Rivera, Hongyi Yu, Kyle L. Seyler, Jiaqiang Yan, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Wang Yao and Xiaodong Xu ()
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John R. Schaibley: University of Washington
Pasqual Rivera: University of Washington
Hongyi Yu: University of Hong Kong
Kyle L. Seyler: University of Washington
Jiaqiang Yan: Oak Ridge National Laboratory
David G. Mandrus: Oak Ridge National Laboratory
Takashi Taniguchi: Advanced Materials Laboratory, National Institute for Materials Science
Kenji Watanabe: Advanced Materials Laboratory, National Institute for Materials Science
Wang Yao: University of Hong Kong
Xiaodong Xu: University of Washington

Nature Communications, 2016, vol. 7, issue 1, 1-6

Abstract: Abstract Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional semiconductor heterostructure is distinct from its three-dimensional counterparts due to the unique coupled spin-valley physics of its constituent monolayers. Here, we report the direct observation that an optically generated spin-valley polarization in one monolayer can be transferred between layers of a two-dimensional MoSe2–WSe2 heterostructure. Using non-degenerate optical circular dichroism spectroscopy, we show that charge transfer between two monolayers conserves spin-valley polarization and is only weakly dependent on the twist angle between layers. Our work points to a new spin-valley pumping scheme in nanoscale devices, provides a fundamental understanding of spin-valley transfer across the two-dimensional interface, and shows the potential use of two-dimensional semiconductors as a spin-valley generator in two-dimensional spin/valleytronic devices for storing and processing information.

Date: 2016
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DOI: 10.1038/ncomms13747

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