In-plane topological p-n junction in the three-dimensional topological insulator Bi2−xSbxTe3−ySey

Ngoc Han Tu, Yoichi Tanabe (), Yosuke Satake, Khuong Kim Huynh and Katsumi Tanigaki ()
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Ngoc Han Tu: Graduate School of Science, Tohoku University
Yoichi Tanabe: Graduate School of Science, Tohoku University
Yosuke Satake: Graduate School of Science, Tohoku University
Khuong Kim Huynh: WPI-Advanced Institute for Materials Research
Katsumi Tanigaki: Graduate School of Science, Tohoku University

Nature Communications, 2016, vol. 7, issue 1, 1-8

Abstract: Abstract A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three-dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI Bi2−xSbxTe3−ySey thin films and experimental observation of the electrical transport. By tuning the chemical potential of n-type topological Dirac surface of Bi2−xSbxTe3−ySey on its top half by using tetrafluoro-7,7,8,8-tetracyanoquinodimethane as an organic acceptor molecule, a half surface can be converted to p-type with leaving the other half side as the opposite n-type, and consequently TPNJ can be created. By sweeping the back-gate voltage in the field effect transistor structure, the TPNJ was controlled both on the bottom and the top surfaces. A dramatic change in electrical transport observed at the TPNJ on 3D-TI thin films promises novel spin and charge transport of 3D-TIs for future spintronics.

Date: 2016
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DOI: 10.1038/ncomms13763

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