Interplay of Dirac electrons and magnetism in CaMnBi2 and SrMnBi2

Anmin Zhang, Changle Liu, Changjiang Yi, Guihua Zhao, Tian-long Xia, Jianting Ji, Youguo Shi, Rong Yu, Xiaoqun Wang, Changfeng Chen and Qingming Zhang ()
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Anmin Zhang: Beijing Key Laboratory of Opto-Electronic Functional Materials and Micro-nano Devices, Renmin University of China
Changle Liu: Beijing Key Laboratory of Opto-Electronic Functional Materials and Micro-nano Devices, Renmin University of China
Changjiang Yi: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Guihua Zhao: Beijing Key Laboratory of Opto-Electronic Functional Materials and Micro-nano Devices, Renmin University of China
Tian-long Xia: Beijing Key Laboratory of Opto-Electronic Functional Materials and Micro-nano Devices, Renmin University of China
Jianting Ji: Beijing Key Laboratory of Opto-Electronic Functional Materials and Micro-nano Devices, Renmin University of China
Youguo Shi: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Rong Yu: Beijing Key Laboratory of Opto-Electronic Functional Materials and Micro-nano Devices, Renmin University of China
Xiaoqun Wang: Beijing Key Laboratory of Opto-Electronic Functional Materials and Micro-nano Devices, Renmin University of China
Changfeng Chen: University of Nevada
Qingming Zhang: Beijing Key Laboratory of Opto-Electronic Functional Materials and Micro-nano Devices, Renmin University of China

Nature Communications, 2016, vol. 7, issue 1, 1-7

Abstract: Abstract Dirac materials exhibit intriguing low-energy carrier dynamics that offer a fertile ground for novel physics discovery. Of particular interest is the interplay of Dirac carriers with other quantum phenomena such as magnetism. Here we report on a two-magnon Raman scattering study of AMnBi2 (A=Ca, Sr), a prototypical magnetic Dirac system comprising alternating Dirac carrier and magnetic layers. We present the first accurate determination of the exchange energies in these compounds and, by comparison with the reference compound BaMn2Bi2, we show that the Dirac carrier layers in AMnBi2 significantly enhance the exchange coupling between the magnetic layers, which in turn drives a charge-gap opening along the Dirac locus. Our findings break new grounds in unveiling the fundamental physics of magnetic Dirac materials, which offer a novel platform for probing a distinct type of spin–Fermion interaction. The results also hold great promise for applications in magnetic Dirac devices.

Date: 2016
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DOI: 10.1038/ncomms13833

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