Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures

Qiang Zhang, Yuxuan Chen, Chendong Zhang, Chi-Ruei Pan, Mei-Yin Chou, Changgan Zeng () and Chih-Kang Shih ()
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Qiang Zhang: University of Texas at Austin
Yuxuan Chen: University of Texas at Austin
Chendong Zhang: University of Texas at Austin
Chi-Ruei Pan: School of Physics, Georgia Institute of Technology
Mei-Yin Chou: School of Physics, Georgia Institute of Technology
Changgan Zeng: Hefei National Laboratory for Physical Sciences at the Microscale (HFNL), CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics
Chih-Kang Shih: University of Texas at Austin

Nature Communications, 2016, vol. 7, issue 1, 1-7

Abstract: Abstract The van der Waals interaction in vertical heterostructures made of two-dimensional (2D) materials relaxes the requirement of lattice matching, therefore enabling great design flexibility to tailor novel 2D electronic systems. Here we report the successful growth of MoSe2 on single-layer hexagonal boron nitride (hBN) on the Ru(0001) substrate using molecular beam epitaxy. Using scanning tunnelling microscopy and spectroscopy, we found that the quasi-particle bandgap of MoSe2 on hBN/Ru is about 0.25 eV smaller than those on graphene or graphite substrates. We attribute this result to the strong interaction between hBN/Ru, which causes residual metallic screening from the substrate. In addition, the electronic structure and the work function of MoSe2 are modulated electrostatically with an amplitude of ∼0.13 eV. Most interestingly, this electrostatic modulation is spatially in phase with the Moiré pattern of hBN on Ru(0001) whose surface also exhibits a work function modulation of the same amplitude.

Date: 2016
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DOI: 10.1038/ncomms13843

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