Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells

Anna Giorgioni (), Stefano Paleari, Stefano Cecchi, Elisa Vitiello, Emanuele Grilli, Giovanni Isella, Wolfgang Jantsch, Marco Fanciulli and Fabio Pezzoli ()
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Anna Giorgioni: Università di Milano Bicocca
Stefano Paleari: Università di Milano Bicocca
Stefano Cecchi: Politecnico di Milano
Elisa Vitiello: Università di Milano Bicocca
Emanuele Grilli: Università di Milano Bicocca
Giovanni Isella: Politecnico di Milano
Wolfgang Jantsch: Institut für Halbleiter-und Festkörperphysik, Johannes Kepler University
Marco Fanciulli: Università di Milano Bicocca
Fabio Pezzoli: Università di Milano Bicocca

Nature Communications, 2016, vol. 7, issue 1, 1-11

Abstract: Abstract Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the desirable but contrasting requirements of spin robustness against relaxation mechanisms and sizeable coupling between spin and orbital motion of the carriers. Here, we focus on Ge, which is a prominent candidate for shuttling spin quantum bits into the mainstream Si electronics. So far, however, the intrinsic spin-dependent phenomena of free electrons in conventional Ge/Si heterojunctions have proved to be elusive because of epitaxy constraints and an unfavourable band alignment. We overcome these fundamental limitations by investigating a two-dimensional electron gas in quantum wells of pure Ge grown on Si. These epitaxial systems demonstrate exceptionally long spin lifetimes. In particular, by fine-tuning quantum confinement we demonstrate that the electron Landé g factor can be engineered in our CMOS-compatible architecture over a range previously inaccessible for Si spintronics.

Date: 2016
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DOI: 10.1038/ncomms13886

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