Purely antiferromagnetic magnetoelectric random access memory

Tobias Kosub (), Martin Kopte, Ruben Hühne, Patrick Appel, Brendan Shields, Patrick Maletinsky, René Hübner, Maciej Oskar Liedke, Jürgen Fassbender, Oliver G. Schmidt and Denys Makarov ()
Additional contact information
Tobias Kosub: Institute for Integrative Nanosciences, Institute for Solid State and Materials Research (IFW Dresden e.V.)
Martin Kopte: Institute for Integrative Nanosciences, Institute for Solid State and Materials Research (IFW Dresden e.V.)
Ruben Hühne: Institute for Metallic Materials, Institute for Solid State and Materials Research (IFW Dresden e.V.)
Patrick Appel: University of Basel
Brendan Shields: University of Basel
Patrick Maletinsky: University of Basel
René Hübner: Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research
Maciej Oskar Liedke: Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Radiation Physics
Jürgen Fassbender: Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research
Oliver G. Schmidt: Institute for Integrative Nanosciences, Institute for Solid State and Materials Research (IFW Dresden e.V.)
Denys Makarov: Institute for Integrative Nanosciences, Institute for Solid State and Materials Research (IFW Dresden e.V.)

Nature Communications, 2017, vol. 8, issue 1, 1-7

Abstract: Abstract Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50-fold reduction of the writing threshold compared with ferromagnet-based counterparts, is robust against magnetic disturbances and exhibits no ferromagnetic hysteresis losses. Using the magnetoelectric antiferromagnet Cr2O3, we demonstrate reliable isothermal switching via gate voltage pulses and all-electric readout at room temperature. As no ferromagnetic component is present in the system, the writing magnetic field does not need to be pulsed for readout, allowing permanent magnets to be used. Based on our prototypes, we construct a comprehensive model of the magnetoelectric selection mechanisms in thin films of magnetoelectric antiferromagnets, revealing misfit induced ferrimagnetism as an important factor. Beyond memory applications, the AF-MERAM concept introduces a general all-electric interface for antiferromagnets and should find wide applicability in antiferromagnetic spintronics.

Date: 2017
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DOI: 10.1038/ncomms13985

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