Highly tensile-strained Ge/InAlAs nanocomposites

Daehwan Jung (), Joseph Faucher, Samik Mukherjee, Austin Akey, Daniel J. Ironside, Matthew Cabral, Xiahan Sang, James Lebeau, Seth R. Bank, Tonio Buonassisi, Oussama Moutanabbir and Minjoo Larry Lee ()
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Daehwan Jung: Yale University
Joseph Faucher: Yale University
Samik Mukherjee: École Polytechnique de Montreal, Montreal
Austin Akey: Massachusetts Institute of Technology
Daniel J. Ironside: University of Texas at Austin
Matthew Cabral: North Carolina State University
Xiahan Sang: North Carolina State University
James Lebeau: North Carolina State University
Seth R. Bank: University of Texas at Austin
Tonio Buonassisi: Massachusetts Institute of Technology
Oussama Moutanabbir: École Polytechnique de Montreal, Montreal
Minjoo Larry Lee: Yale University

Nature Communications, 2017, vol. 8, issue 1, 1-7

Abstract: Abstract Self-assembled nanocomposites have been extensively investigated due to the novel properties that can emerge when multiple material phases are combined. Growth of epitaxial nanocomposites using lattice-mismatched constituents also enables strain-engineering, which can be used to further enhance material properties. Here, we report self-assembled growth of highly tensile-strained Ge/In0.52Al0.48As (InAlAs) nanocomposites by using spontaneous phase separation. Transmission electron microscopy shows a high density of single-crystalline germanium nanostructures coherently embedded in InAlAs without extended defects, and Raman spectroscopy reveals a 3.8% biaxial tensile strain in the germanium nanostructures. We also show that the strain in the germanium nanostructures can be tuned to 5.3% by altering the lattice constant of the matrix material, illustrating the versatility of epitaxial nanocomposites for strain engineering. Photoluminescence and electroluminescence results are then discussed to illustrate the potential for realizing devices based on this nanocomposite material.

Date: 2017
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DOI: 10.1038/ncomms14204

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