Zero-gap semiconductor to excitonic insulator transition in Ta2NiSe5

Y. F. Lu, H. Kono, T. I. Larkin, A. W. Rost (), T. Takayama, A. V. Boris, B. Keimer and H. Takagi ()
Additional contact information
Y. F. Lu: University of Tokyo
H. Kono: University of Tokyo
T. I. Larkin: Max Planck Institute for Solid State Research
A. W. Rost: Max Planck Institute for Solid State Research
T. Takayama: Max Planck Institute for Solid State Research
A. V. Boris: Max Planck Institute for Solid State Research
B. Keimer: Max Planck Institute for Solid State Research
H. Takagi: University of Tokyo

Nature Communications, 2017, vol. 8, issue 1, 1-7

Abstract: Abstract The excitonic insulator is a long conjectured correlated electron phase of narrow-gap semiconductors and semimetals, driven by weakly screened electron–hole interactions. Having been proposed more than 50 years ago, conclusive experimental evidence for its existence remains elusive. Ta2NiSe5 is a narrow-gap semiconductor with a small one-electron bandgap EG of

Date: 2017
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DOI: 10.1038/ncomms14408

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