Ubiquitous strong electron–phonon coupling at the interface of FeSe/SrTiO3

Chaofan Zhang, Zhongkai Liu, Zhuoyu Chen, Yanwu Xie, Ruihua He, Shujie Tang, Junfeng He, Wei Li, Tao Jia, Slavko N. Rebec, Eric Yue Ma, Hao Yan, Makoto Hashimoto, Donghui Lu, Sung-Kwan Mo, Yasuyuki Hikita, Robert G. Moore, Harold Y. Hwang, Dunghai Lee and Zhixun Shen ()
Additional contact information
Chaofan Zhang: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory
Zhongkai Liu: School of Physical Science and Technology, ShanghaiTech University
Zhuoyu Chen: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory
Yanwu Xie: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory
Ruihua He: Boston College
Shujie Tang: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory
Junfeng He: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory
Wei Li: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory
Tao Jia: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory
Slavko N. Rebec: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory
Eric Yue Ma: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory
Hao Yan: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory
Makoto Hashimoto: Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory
Donghui Lu: Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory
Sung-Kwan Mo: Advanced Light Source, Lawrence Berkeley National Laboratory
Yasuyuki Hikita: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory
Robert G. Moore: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory
Harold Y. Hwang: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory
Dunghai Lee: University of California at Berkeley
Zhixun Shen: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory

Nature Communications, 2017, vol. 8, issue 1, 1-6

Abstract: Abstract The observation of replica bands in single-unit-cell FeSe on SrTiO3 (STO)(001) by angle-resolved photoemission spectroscopy (ARPES) has led to the conjecture that the coupling between FeSe electrons and the STO phonons are responsible for the enhancement of Tc over other FeSe-based superconductors. However the recent observation of a similar superconducting gap in single-unit-cell FeSe/STO(110) raised the question of whether a similar mechanism applies. Here we report the ARPES study of the electronic structure of FeSe/STO(110). Similar to the results in FeSe/STO(001), clear replica bands are observed. We also present a comparative study of STO(001) and STO(110) bare surfaces, and observe similar replica bands separated by approximately the same energy, indicating this coupling is a generic feature of the STO surfaces and interfaces. Our findings suggest that the large superconducting gaps observed in FeSe films grown on different STO surface terminations are likely enhanced by a common mechanism.

Date: 2017
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DOI: 10.1038/ncomms14468

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