Efficient electrical control of thin-film black phosphorus bandgap

Bingchen Deng, Vy Tran, Yujun Xie, Hao Jiang, Cheng Li, Qiushi Guo, Xiaomu Wang, He Tian, Steven J. Koester, Han Wang, Judy J. Cha, Qiangfei Xia, Li Yang () and Fengnian Xia ()
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Bingchen Deng: Yale University
Vy Tran: Washington University
Yujun Xie: Yale University
Hao Jiang: University of Massachusetts
Cheng Li: Yale University
Qiushi Guo: Yale University
Xiaomu Wang: Yale University
He Tian: University of Southern California
Steven J. Koester: University of Minnesota
Han Wang: University of Southern California
Judy J. Cha: Yale University
Qiangfei Xia: University of Massachusetts
Li Yang: Washington University
Fengnian Xia: Yale University

Nature Communications, 2017, vol. 8, issue 1, 1-7

Abstract: Abstract Recently rediscovered black phosphorus is a layered semiconductor with promising electronic and photonic properties. Dynamic control of its bandgap can allow for the exploration of new physical phenomena. However, theoretical investigations and photoemission spectroscopy experiments indicate that in its few-layer form, an exceedingly large electric field in the order of several volts per nanometre is required to effectively tune its bandgap, making the direct electrical control unfeasible. Here we reveal the unique thickness-dependent bandgap tuning properties in intrinsic black phosphorus, arising from the strong interlayer electronic-state coupling. Furthermore, leveraging a 10 nm-thick black phosphorus, we continuously tune its bandgap from ∼300 to below 50 meV, using a moderate displacement field up to 1.1 V nm−1. Such dynamic tuning of bandgap may not only extend the operational wavelength range of tunable black phosphorus photonic devices, but also pave the way for the investigation of electrically tunable topological insulators and semimetals.

Date: 2017
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DOI: 10.1038/ncomms14474

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