Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals

Benjamin J. Carey, Jian Zhen Ou, Rhiannon M. Clark, Kyle J. Berean, Ali Zavabeti, Anthony S. R. Chesman, Salvy P. Russo, Desmond W. M. Lau, Zai-Quan Xu, Qiaoliang Bao, Omid Kavehei, Brant C. Gibson, Michael D. Dickey, Richard B. Kaner, Torben Daeneke () and Kourosh Kalantar-Zadeh ()
Additional contact information
Benjamin J. Carey: School of Engineering, RMIT University
Jian Zhen Ou: School of Engineering, RMIT University
Rhiannon M. Clark: School of Engineering, RMIT University
Kyle J. Berean: School of Engineering, RMIT University
Ali Zavabeti: School of Engineering, RMIT University
Anthony S. R. Chesman: Manufacturing Business Unit, CSIRO
Salvy P. Russo: ARC Centre of Excellence in Exciton Science, School of Science, RMIT University
Desmond W. M. Lau: ARC Centre for Excellence for Nanoscale BioPhotonics (CNBP), School of Science, RMIT University
Zai-Quan Xu: Monash University
Qiaoliang Bao: Monash University
Omid Kavehei: School of Engineering, RMIT University
Brant C. Gibson: ARC Centre for Excellence for Nanoscale BioPhotonics (CNBP), School of Science, RMIT University
Michael D. Dickey: NC State University
Richard B. Kaner: University of California, Los Angeles
Torben Daeneke: School of Engineering, RMIT University
Kourosh Kalantar-Zadeh: School of Engineering, RMIT University

Nature Communications, 2017, vol. 8, issue 1, 1-10

Abstract: Abstract A variety of deposition methods for two-dimensional crystals have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we introduce a technique for depositing and patterning of wafer-scale two-dimensional metal chalcogenide compounds by transforming the native interfacial metal oxide layer of low melting point metal precursors (group III and IV) in liquid form. In an oxygen-containing atmosphere, these metals establish an atomically thin oxide layer in a self-limiting reaction. The layer increases the wettability of the liquid metal placed on oxygen-terminated substrates, leaving the thin oxide layer behind. In the case of liquid gallium, the oxide skin attaches exclusively to a substrate and is then sulfurized via a relatively low temperature process. By controlling the surface chemistry of the substrate, we produce large area two-dimensional semiconducting GaS of unit cell thickness (∼1.5 nm). The presented deposition and patterning method offers great commercial potential for wafer-scale processes.

Date: 2017
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DOI: 10.1038/ncomms14482

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