Monolayer optical memory cells based on artificial trap-mediated charge storage and release

Juwon Lee, Sangyeon Pak, Young-Woo Lee, Yuljae Cho, John Hong, Paul Giraud, Hyeon Suk Shin, Stephen M. Morris, Jung Inn Sohn (), SeungNam Cha () and Jong Min Kim
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Juwon Lee: University of Oxford
Sangyeon Pak: University of Oxford
Young-Woo Lee: University of Oxford
Yuljae Cho: University of Oxford
John Hong: University of Oxford
Paul Giraud: University of Oxford
Hyeon Suk Shin: Ulsan National Institute of Science and Technology (UNIST)
Stephen M. Morris: University of Oxford
Jung Inn Sohn: University of Oxford
SeungNam Cha: University of Oxford
Jong Min Kim: University of Oxford

Nature Communications, 2017, vol. 8, issue 1, 1-8

Abstract: Abstract Monolayer transition metal dichalcogenides are considered to be promising candidates for flexible and transparent optoelectronics applications due to their direct bandgap and strong light-matter interactions. Although several monolayer-based photodetectors have been demonstrated, single-layered optical memory devices suitable for high-quality image sensing have received little attention. Here we report a concept for monolayer MoS2 optoelectronic memory devices using artificially-structured charge trap layers through the functionalization of the monolayer/dielectric interfaces, leading to localized electronic states that serve as a basis for electrically-induced charge trapping and optically-mediated charge release. Our devices exhibit excellent photo-responsive memory characteristics with a large linear dynamic range of ∼4,700 (73.4 dB) coupled with a low OFF-state current (

Date: 2017
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DOI: 10.1038/ncomms14734

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