Electrical spin injection and detection in molybdenum disulfide multilayer channel

Shiheng Liang, Huaiwen Yang, Pierre Renucci, Bingshan Tao, Piotr Laczkowski, Stefan Mc-Murtry, Gang Wang, Xavier Marie, Jean-Marie George, Sébastien Petit-Watelot, Abdelhak Djeffal, Stéphane Mangin, Henri Jaffrès () and Yuan Lu ()
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Shiheng Liang: Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine
Huaiwen Yang: Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine
Pierre Renucci: Université de Toulouse, INSA-CNRS-UPS, LPCNO
Bingshan Tao: Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine
Piotr Laczkowski: Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay
Stefan Mc-Murtry: Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine
Gang Wang: Université de Toulouse, INSA-CNRS-UPS, LPCNO
Xavier Marie: Université de Toulouse, INSA-CNRS-UPS, LPCNO
Jean-Marie George: Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay
Sébastien Petit-Watelot: Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine
Abdelhak Djeffal: Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine
Stéphane Mangin: Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine
Henri Jaffrès: Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay
Yuan Lu: Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine

Nature Communications, 2017, vol. 8, issue 1, 1-9

Abstract: Abstract Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, the demonstration of an electron spin transport through a semiconducting MoS2 channel remains challenging. Here we show the evidence of the electrical spin injection and detection in the conduction band of a multilayer MoS2 semiconducting channel using a two-terminal spin-valve configuration geometry. A magnetoresistance around 1% has been observed through a 450 nm long, 6 monolayer thick MoS2 channel with a Co/MgO tunnelling spin injector and detector. It is found that keeping a good balance between the interface resistance and channel resistance is mandatory for the observation of the two-terminal magnetoresistance. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel with an in-plane spin polarization. The long spin diffusion length (approximately ∼235 nm) could open a new avenue for spintronic applications using multilayer transition metal dichalcogenides.

Date: 2017
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DOI: 10.1038/ncomms14947

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