Charge carrier mobility in thin films of organic semiconductors by the gated van der Pauw method

Cedric Rolin (), Enpu Kang, Jeong-Hwan Lee, Gustaaf Borghs, Paul Heremans and Jan Genoe
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Cedric Rolin: IMEC, Large Area Electronics
Enpu Kang: IMEC, Large Area Electronics
Jeong-Hwan Lee: IMEC, Large Area Electronics
Gustaaf Borghs: KU Leuven
Paul Heremans: IMEC, Large Area Electronics
Jan Genoe: IMEC, Large Area Electronics

Nature Communications, 2017, vol. 8, issue 1, 1-9

Abstract: Abstract Thin film transistors based on high-mobility organic semiconductors are prone to contact problems that complicate the interpretation of their electrical characteristics and the extraction of important material parameters such as the charge carrier mobility. Here we report on the gated van der Pauw method for the simple and accurate determination of the electrical characteristics of thin semiconducting films, independently from contact effects. We test our method on thin films of seven high-mobility organic semiconductors of both polarities: device fabrication is fully compatible with common transistor process flows and device measurements deliver consistent and precise values for the charge carrier mobility and threshold voltage in the high-charge carrier density regime that is representative of transistor operation. The gated van der Pauw method is broadly applicable to thin films of semiconductors and enables a simple and clean parameter extraction independent from contact effects.

Date: 2017
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_ncomms14975

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DOI: 10.1038/ncomms14975

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