Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor

Artur Branny, Santosh Kumar, Raphaël Proux and Brian D Gerardot ()
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Artur Branny: Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University
Santosh Kumar: Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University
Raphaël Proux: Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University
Brian D Gerardot: Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University

Nature Communications, 2017, vol. 8, issue 1, 1-7

Abstract: Abstract An outstanding challenge in quantum photonics is scalability, which requires positioning of single quantum emitters in a deterministic fashion. Site positioning progress has been made in established platforms including defects in diamond and self-assembled quantum dots, albeit often with compromised coherence and optical quality. The emergence of single quantum emitters in layered transition metal dichalcogenide semiconductors offers new opportunities to construct a scalable quantum architecture. Here, using nanoscale strain engineering, we deterministically achieve a two-dimensional lattice of quantum emitters in an atomically thin semiconductor. We create point-like strain perturbations in mono- and bi-layer WSe2 which locally modify the band-gap, leading to efficient funnelling of excitons towards isolated strain-tuned quantum emitters that exhibit high-purity single photon emission. We achieve near unity emitter creation probability and a mean positioning accuracy of 120±32 nm, which may be improved with further optimization of the nanopillar dimensions.

Date: 2017
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DOI: 10.1038/ncomms15053

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