Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm−1

Abhinav Prakash (), Peng Xu, Alireza Faghaninia, Sudhanshu Shukla, Joel W. Ager, Cynthia S. Lo and Bharat Jalan ()
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Abhinav Prakash: Chemical Engineering and Materials Science, University of Minnesota–Twin Cities
Peng Xu: Chemical Engineering and Materials Science, University of Minnesota–Twin Cities
Alireza Faghaninia: Environmental, and Chemical Engineering, Washington University
Sudhanshu Shukla: Lawrence Berkeley National Laboratory
Joel W. Ager: Lawrence Berkeley National Laboratory
Cynthia S. Lo: Environmental, and Chemical Engineering, Washington University
Bharat Jalan: Chemical Engineering and Materials Science, University of Minnesota–Twin Cities

Nature Communications, 2017, vol. 8, issue 1, 1-9

Abstract: Abstract Wide bandgap perovskite oxides with high room temperature conductivities and structural compatibility with a diverse family of organic/inorganic perovskite materials are of significant interest as transparent conductors and as active components in power electronics. Such materials must also possess high room temperature mobility to minimize power consumption and to enable high-frequency applications. Here, we report n-type BaSnO3 films grown using hybrid molecular beam epitaxy with room temperature conductivity exceeding 104 S cm−1. Significantly, these films show room temperature mobilities up to 120 cm2 V−1 s−1 even at carrier concentrations above 3 × 1020 cm−3 together with a wide bandgap (3 eV). We examine the mobility-limiting scattering mechanisms by calculating temperature-dependent mobility, and Seebeck coefficient using the Boltzmann transport framework and ab-initio calculations. These results place perovskite oxide semiconductors for the first time on par with the highly successful III–N system, thereby bringing all-transparent, high-power oxide electronics operating at room temperature a step closer to reality.

Date: 2017
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DOI: 10.1038/ncomms15167

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