Tailoring spin defects in diamond by lattice charging

Felipe Fávaro de Oliveira (), Denis Antonov, Ya Wang, Philipp Neumann, Seyed Ali Momenzadeh, Timo Häußermann, Alberto Pasquarelli, Andrej Denisenko () and Jörg Wrachtrup
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Felipe Fávaro de Oliveira: 3rd Institute of Physics, Research Center SCoPE and IQST, University of Stuttgart
Denis Antonov: 3rd Institute of Physics, Research Center SCoPE and IQST, University of Stuttgart
Ya Wang: 3rd Institute of Physics, Research Center SCoPE and IQST, University of Stuttgart
Philipp Neumann: 3rd Institute of Physics, Research Center SCoPE and IQST, University of Stuttgart
Seyed Ali Momenzadeh: 3rd Institute of Physics, Research Center SCoPE and IQST, University of Stuttgart
Timo Häußermann: 3rd Institute of Physics, Research Center SCoPE and IQST, University of Stuttgart
Alberto Pasquarelli: Institute of Electron Devices and Circuits, University of Ulm
Andrej Denisenko: 3rd Institute of Physics, Research Center SCoPE and IQST, University of Stuttgart
Jörg Wrachtrup: 3rd Institute of Physics, Research Center SCoPE and IQST, University of Stuttgart

Nature Communications, 2017, vol. 8, issue 1, 1-8

Abstract: Abstract Atomic-size spin defects in solids are unique quantum systems. Most applications require nanometre positioning accuracy, which is typically achieved by low-energy ion implantation. A drawback of this technique is the significant residual lattice damage, which degrades the performance of spins in quantum applications. Here we show that the charge state of implantation-induced defects drastically influences the formation of lattice defects during thermal annealing. Charging of vacancies at, for example, nitrogen implantation sites suppresses the formation of vacancy complexes, resulting in tenfold-improved spin coherence times and twofold-improved formation yield of nitrogen-vacancy centres in diamond. This is achieved by confining implantation defects into the space-charge layer of free carriers generated by a boron-doped diamond structure. By combining these results with numerical calculations, we arrive at a quantitative understanding of the formation and dynamics of the implanted spin defects. These results could improve engineering of quantum devices using solid-state systems.

Date: 2017
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DOI: 10.1038/ncomms15409

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