Giant electron-hole transport asymmetry in ultra-short quantum transistors

A. C. McRae, V. Tayari, J. M. Porter and A. R. Champagne ()
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A. C. McRae: Concordia University
V. Tayari: Concordia University
J. M. Porter: Concordia University
A. R. Champagne: Concordia University

Nature Communications, 2017, vol. 8, issue 1, 1-8

Abstract: Abstract Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an n-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (e−h charging energy asymmetry). We parameterize the e−h transport asymmetry by the ratio of the hole and electron charging energies ηe−h. This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14 nm-long channel, ηe−h reaches up to 2.6 for a device with a band gap of 270 meV. The charging energies in this device exceed 100 meV.

Date: 2017
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DOI: 10.1038/ncomms15491

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