Electronic evidence of temperature-induced Lifshitz transition and topological nature in ZrTe5

Yan Zhang, Chenlu Wang, Li Yu, Guodong Liu (), Aiji Liang, Jianwei Huang, Simin Nie, Xuan Sun, Yuxiao Zhang, Bing Shen, Jing Liu, Hongming Weng, Lingxiao Zhao, Genfu Chen, Xiaowen Jia, Cheng Hu, Ying Ding, Wenjuan Zhao, Qiang Gao, Cong Li, Shaolong He, Lin Zhao, Fengfeng Zhang, Shenjin Zhang, Feng Yang, Zhimin Wang, Qinjun Peng, Xi Dai, Zhong Fang, Zuyan Xu, Chuangtian Chen and X. J. Zhou ()
Additional contact information
Yan Zhang: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Chenlu Wang: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Li Yu: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Guodong Liu: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Aiji Liang: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Jianwei Huang: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Simin Nie: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Xuan Sun: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Yuxiao Zhang: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Bing Shen: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Jing Liu: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Hongming Weng: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Lingxiao Zhao: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Genfu Chen: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Xiaowen Jia: Military Transportation University
Cheng Hu: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Ying Ding: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Wenjuan Zhao: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Qiang Gao: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Cong Li: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Shaolong He: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Lin Zhao: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Fengfeng Zhang: Technical Institute of Physics and Chemistry, Chinese Academy of Sciences
Shenjin Zhang: Technical Institute of Physics and Chemistry, Chinese Academy of Sciences
Feng Yang: Technical Institute of Physics and Chemistry, Chinese Academy of Sciences
Zhimin Wang: Technical Institute of Physics and Chemistry, Chinese Academy of Sciences
Qinjun Peng: Technical Institute of Physics and Chemistry, Chinese Academy of Sciences
Xi Dai: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Zhong Fang: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Zuyan Xu: Technical Institute of Physics and Chemistry, Chinese Academy of Sciences
Chuangtian Chen: Technical Institute of Physics and Chemistry, Chinese Academy of Sciences
X. J. Zhou: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences

Nature Communications, 2017, vol. 8, issue 1, 1-9

Abstract: Abstract The topological materials have attracted much attention for their unique electronic structure and peculiar physical properties. ZrTe5 has host a long-standing puzzle on its anomalous transport properties manifested by its unusual resistivity peak and the reversal of the charge carrier type. It is also predicted that single-layer ZrTe5 is a two-dimensional topological insulator and there is possibly a topological phase transition in bulk ZrTe5. Here we report high-resolution laser-based angle-resolved photoemission measurements on the electronic structure and its detailed temperature evolution of ZrTe5. Our results provide direct electronic evidence on the temperature-induced Lifshitz transition, which gives a natural understanding on underlying origin of the resistivity anomaly in ZrTe5. In addition, we observe one-dimensional-like electronic features from the edges of the cracked ZrTe5 samples. Our observations indicate that ZrTe5 is a weak topological insulator and it exhibits a tendency to become a strong topological insulator when the layer distance is reduced.

Date: 2017
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DOI: 10.1038/ncomms15512

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